GaCaN3

ceramic

· GaCaN3

GaCaN₃ is an experimental wide-bandgap semiconductor ceramic compound combining gallium, carbon, and nitrogen elements. This material belongs to the ternary nitride family and is primarily of research interest for next-generation optoelectronic and high-power electronic device applications, where its wide bandgap properties could enable operation at higher temperatures and voltages compared to conventional semiconductors like GaN or SiC.

Wide-bandgap semiconductorsHigh-temperature electronicsPower conversion devicesOptoelectronics researchNext-generation RF/microwave componentsThermal management applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00931	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaCaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental