GaBO2N

ceramic

· GaBO2N

GaBO2N is an advanced ceramic compound combining gallium, boron, oxygen, and nitrogen—a quaternary ceramic material that bridges nitride and oxide chemistries. This composition is primarily explored in research contexts for high-temperature structural applications and electronic/photonic devices, where the combination of thermal stability, hardness, and potential semiconductor properties offers advantages over conventional binary ceramics like aluminum oxide or gallium nitride alone.

High-temperature structural ceramicsWide-bandgap semiconductorsThermal barrier coatingsResearch and development materialsOptoelectronic device substrates

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.5055	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.480	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental