GaBN is an experimental ceramic compound combining gallium and boron nitride, representing a materials research effort to develop advanced nitride-based ceramics with potential for extreme-environment applications. While not yet established in mainstream industrial production, this material family is investigated for high-temperature structural applications and semiconductor-related uses, where superior hardness and thermal stability compared to conventional ceramics could provide performance advantages in demanding aerospace, defense, or electronics contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 99.46 | GPa | — | ||
Poisson's Ratio(ν) | 0.4900 | - | — | ||
Shear Modulus(G) | -610.0 | MPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.164 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.747 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.821 | eV/atom | — |