GaBN2

ceramic
· JVASP-36144· GaBN2

GaBN2 is an experimental ceramic compound in the gallium nitride (GaN) family, incorporating boron and nitrogen to create a wide-bandgap semiconductor ceramic with potential for extreme-environment applications. This material remains primarily in research and development, studied for its hardness, thermal stability, and electronic properties that could enable next-generation high-temperature semiconductors, power electronics, and wear-resistant coatings. Engineers would consider GaBN2 for applications demanding both mechanical robustness and thermal performance in harsh conditions, though material availability and processing methods are still being refined.

wide-bandgap semiconductorshigh-temperature power electronicswear-resistant coatingsextreme-environment applicationsresearch material development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Poisson's Ratio(ν)
-
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Dielectric Constant (Relative Permittivity)(εr)
-
Magnetic Moment(μB)
µB
Piezoelectric Modulus(eij)
C/m²
Seebeck Coefficient(S)
µV/K
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.