GaBN2 is an experimental ceramic compound in the gallium nitride (GaN) family, incorporating boron and nitrogen to create a wide-bandgap semiconductor ceramic with potential for extreme-environment applications. This material remains primarily in research and development, studied for its hardness, thermal stability, and electronic properties that could enable next-generation high-temperature semiconductors, power electronics, and wear-resistant coatings. Engineers would consider GaBN2 for applications demanding both mechanical robustness and thermal performance in harsh conditions, though material availability and processing methods are still being refined.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 255.9 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2200 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 181.6 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.271 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.262 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr) | 12.08 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 5.565 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 1.073 | C/m² | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3711 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6088 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data