GaBiS3

ceramic
· JVASP-115669· GaBiS3

GaBiS3 is an experimental ternary ceramic compound composed of gallium, bismuth, and sulfur, belonging to the family of semiconducting and photonic ceramics. While not yet widely adopted in mainstream industrial production, materials in this chemical family are of significant research interest for optoelectronic applications, particularly in infrared sensing and photonic device engineering where the wide bandgap and thermal stability of bismuth-containing sulfides offer potential advantages over conventional semiconductors. Engineers evaluating GaBiS3 would typically be exploring next-generation photonic or detector systems where chemical stability and specific electronic properties align with extreme environment or specialized wavelength requirements.

infrared sensorsexperimental photonicswide-bandgap semiconductorsoptoelectronic researchthermal-stable ceramicsdetector materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Bulk Modulus(K)
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Poisson's Ratio(ν)
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Shear Modulus(G)
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Density(ρ)
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Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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Magnetic Moment(μB)
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Verified Unverified Low confidence (<80%) Link to source
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Energy Above Hull(ΔEhull)
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Formation Energy(ΔHf)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.