GaBiS3 is an experimental ternary ceramic compound composed of gallium, bismuth, and sulfur, belonging to the family of semiconducting and photonic ceramics. While not yet widely adopted in mainstream industrial production, materials in this chemical family are of significant research interest for optoelectronic applications, particularly in infrared sensing and photonic device engineering where the wide bandgap and thermal stability of bismuth-containing sulfides offer potential advantages over conventional semiconductors. Engineers evaluating GaBiS3 would typically be exploring next-generation photonic or detector systems where chemical stability and specific electronic properties align with extreme environment or specialized wavelength requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,505.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 4,484.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2124 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5256 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05948 | eV/atom | — |