GaBiON2 is an experimental bismuth gallium oxide ceramic compound that combines gallium and bismuth oxides, positioning it within the broader family of wide-bandgap semiconductor oxides and functional ceramics. This material is primarily of research interest for next-generation electronic and photonic applications where thermal stability, optical properties, or electrical characteristics of mixed-metal oxide systems offer advantages over conventional single-oxide ceramics. The material's development reflects ongoing efforts in materials science to engineer oxide compounds with tailored bandgaps and defect structures for optoelectronics, sensing, or high-temperature device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.02259 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.380 | eV/atom | — |