GaBiO2N — Properties & Data | MatWorld

GaBiO2N

ceramic

· GaBiO2N

GaBiO₂N is an experimental ternary oxide nitride ceramic combining gallium, bismuth, oxygen, and nitrogen elements. This compound belongs to the family of mixed-anion ceramics being investigated for semiconductor and photocatalytic applications, where the incorporation of nitrogen into oxide frameworks can modify electronic properties and band structure compared to conventional oxides.

Photocatalytic applicationsSemiconductor researchVisible-light catalysisWater treatment (experimental)Thin-film devices (research stage)Next-generation ceramics development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.0000644	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.160	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental