GaBiO₂ is an experimental ceramic compound combining gallium and bismuth oxides, representing an emerging material in the family of mixed-metal oxide ceramics. This compound remains largely in research and development phases, with potential applications in optoelectronic devices, photocatalysis, and advanced ceramic systems where gallium's semiconducting properties can be leveraged in a stable oxide matrix. Engineers would consider this material for next-generation applications requiring novel electronic or photonic functionality rather than conventional structural or thermal applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.81 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | -11.23 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.919 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1790 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 13.43 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5440 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.9940 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data