GaBiN3

ceramic

· GaBiN3

GaBiN₃ is an experimental ternary ceramic compound combining gallium, bismuth, and nitrogen, representing an emerging research material in the nitride ceramic family. While not yet established in mainstream industrial production, this material belongs to the broader class of wide-bandgap semiconductors and advanced ceramics being investigated for high-temperature, high-frequency, or radiation-resistant applications where conventional nitrides (GaN, AlN) reach their limits. Its potential relevance lies in specialized electronics, photonics, or extreme-environment applications, though design engineers should verify material availability, processing maturity, and property validation against published research before considering it for production designs.

experimental semiconductor researchhigh-temperature electronicswide-bandgap devicesradiation-hardened componentsadvanced nitride ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.434	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental