GaBi

semiconductor
· GaBi

Gallium antimonide (GaBi) is a III-V compound semiconductor formed from gallium and antimony, engineered for optoelectronic and high-frequency applications. It is primarily used in infrared detectors, thermophotovoltaic devices, and high-speed transistors where its narrow bandgap and high carrier mobility provide advantages over silicon and wider-bandgap III-V materials. GaBi is notable for sensitivity in the mid- to far-infrared spectrum and for operation at elevated temperatures, making it valuable in thermal imaging, night-vision systems, and space-based sensing where conventional semiconductors fall short.

infrared detectors and sensorsthermophotovoltaic deviceshigh-speed RF transistorsthermal imaging systemsspace and aerospace electronicslong-wavelength optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Density(ρ)
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)
µB
Seebeck Coefficient(S)
µV/K
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.