Gallium antimonide (GaBi) is a III-V compound semiconductor formed from gallium and antimony, engineered for optoelectronic and high-frequency applications. It is primarily used in infrared detectors, thermophotovoltaic devices, and high-speed transistors where its narrow bandgap and high carrier mobility provide advantages over silicon and wider-bandgap III-V materials. GaBi is notable for sensitivity in the mid- to far-infrared spectrum and for operation at elevated temperatures, making it valuable in thermal imaging, night-vision systems, and space-based sensing where conventional semiconductors fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.929 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.1000 | eV | Measured | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000129 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.0000112 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -11.13 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | -3.310 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02500 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.02496 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data