GaBeO2N

ceramic

· GaBeO2N

GaBeO₂N is an experimental wide-bandgap ceramic compound combining gallium, beryllium, oxygen, and nitrogen—a quaternary nitride-oxide system that extends beyond conventional binary and ternary ceramics. While not yet commercialized, materials in this family are investigated for next-generation optoelectronic and high-temperature applications where the combination of light-element constituents (Be, N) and wide bandgap character promise superior thermal stability, electrical isolation, and potential UV transparency compared to established alternatives like GaN or AlN.

Research and development—wide-bandgap semiconductorsHigh-temperature electronic substratesUV optoelectronics—exploratory phaseThermal management in extreme environmentsNext-generation nitride device engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.963	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental