GaBeN3

ceramic

· GaBeN3

GaBeN₃ is an experimental ceramic compound combining gallium and beryllium nitrides, belonging to the family of III-V and II-V nitride semiconductors and advanced ceramics. While not yet commercialized at scale, this material is of research interest for high-temperature applications and wide-bandgap semiconductor devices, potentially offering improved thermal stability and electronic performance compared to conventional gallium nitride (GaN) or aluminum nitride (AlN) alternatives in demanding aerospace and defense environments.

wide-bandgap semiconductors (research)high-temperature electronicsaerospace thermal managementRF/microwave devices (experimental)advanced ceramic coatingsnext-generation power electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00116	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.020	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBeN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental