GaBaN3

ceramic

· GaBaN3

GaBaN3 is an experimental ceramic compound combining gallium, boron, and nitrogen—a ternary nitride material being investigated for its potential semiconductor and refractory properties. Research into this material family is motivated by the thermal stability and wide bandgap characteristics that could make it relevant for high-temperature electronics, power devices, or advanced optoelectronics, though it remains in early-stage development with limited industrial deployment.

high-temperature semiconductorswide-bandgap electronicsexperimental power devicesrefractory coatingsresearch materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaBaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental