GaB₃N₄ is an advanced ceramic compound combining gallium, boron, and nitrogen—a material class known for exceptional hardness and thermal stability. While primarily a research-phase compound, it belongs to the family of boron nitride and gallium nitride ceramics that show promise for extreme-environment applications where conventional ceramics face limitations. The gallium-boron-nitrogen system is being explored for ultra-high-temperature structural applications, semiconductor processing, and wear-resistant coatings where the combination of covalent bonding and wide bandgap properties could outperform established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 305.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.1900 | - | — | ||
Shear Modulus(G) | 238.5 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.517 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.976 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.344 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 1.069 | C/m² | — | ||
Seebeck Coefficient(S) | -241.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3837 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8007 | eV/atom | — |