GaAuN3

metal

· GaAuN3

GaAuN3 is an experimental intermetallic compound combining gallium, gold, and nitrogen, representing an emerging class of ternary metal nitrides with potential for high-performance applications. While not yet widely deployed in conventional engineering, this material family is of research interest for semiconductor, optoelectronic, and high-temperature applications where the combined properties of noble metals, reactive metals, and nitride ceramic phases could offer novel performance windows. Engineers would consider such compounds when seeking materials that combine electrical conductivity, thermal stability, and chemical resistance in extreme environments or specialized microelectronic contexts.

experimental semiconductorshigh-temperature coatingsoptoelectronic researchadvanced ceramics developmentspecialty alloy research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.8510	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAuN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control