GaAu is a gold-gallium intermetallic compound or alloy system combining a precious metal (gold) with a semiconductor element (gallium). This material exists primarily in research and specialized metallurgical contexts, as it combines gold's excellent electrical and thermal conductivity with gallium's semiconductor properties, making it of interest for advanced electronic and optoelectronic device fabrication where precious metal contacts or barriers are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.4322 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -7.603 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2196 | eV/atom | — |