GaAsRh4 is a gallium arsenide-based compound ceramic incorporating rhodium, belonging to the family of III-V semiconductor ceramics with potential for high-performance electronic or optoelectronic applications. This appears to be a research or specialized compound rather than a widely commercialized material; compounds in this family are investigated for their electronic band structure, thermal stability, and potential use in extreme environment or high-frequency device contexts. Engineers considering this material should evaluate it primarily for advanced semiconductor research, specialized device fabrication, or high-temperature electronic applications where conventional GaAs variants are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3868 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02810 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3746 | eV/atom | — |