GaAsON2

ceramic

· GaAsON2

GaAsON2 is an experimental oxynitride ceramic compound based on gallium arsenide (GaAs), combining Group III-V semiconductor chemistry with oxygen and nitrogen incorporation to modify electronic and optical properties. This material family is primarily under research and development for advanced photonic and optoelectronic applications where engineered bandgap, thermal stability, or lattice properties offer advantages over conventional GaAs or other III-V nitrides. Interest in GaAsON2 stems from potential use in next-generation high-efficiency solar cells, visible-light emitters, and wide-bandgap semiconductor devices, though industrial deployment remains limited pending further material refinement and manufacturability breakthroughs.

photovoltaic researchoptoelectronic devicesbandgap engineeringIII-V semiconductorssolar cell developmentlight-emitting devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00264	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.100	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental