GaAsOFN

ceramic

· GaAsOFN

GaAsOFN is a compound ceramic material based on gallium arsenide (GaAs) with oxygen and fluorine incorporation, representing a specialized variant within the III-V semiconductor ceramic family. This material is primarily of research and development interest for optoelectronic and photonic applications where modified electronic or optical properties are desired compared to pure GaAs. The fluorine and oxygen dopants or structural modifications enable tuning of bandgap, refractive index, or defect characteristics for niche applications in integrated photonics, quantum optics, or specialized sensor systems.

optoelectronic substratesphotonic integrated circuitsquantum light sourcesIII-V semiconductor researchspecialty optical coatings

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	5.868e-11	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental