GaAsO is an experimental ceramic compound composed of gallium, arsenic, and oxygen, representing a mixed-anion oxide in the III-V semiconductor family. While not widely commercialized, this material is of research interest in optoelectronics and photonic device development, where gallium arsenide-based ceramics are explored for their potential to combine semiconducting and ceramic properties. Engineers investigating this material would typically be working on advanced photonic applications, high-frequency devices, or fundamental studies of mixed-valence oxide systems rather than selecting it for conventional structural or thermal applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -208.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.4600 | - | — | ||
Shear Modulus(G) | -517.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.04823 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.090 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.225 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.039 | eV/atom | — |