GaAsO4 — Properties & Data | MatWorld

GaAsO4

ceramic

· JVASP-61798· GaAsO4

Gallium arsenate oxide (GaAsO₄) is an advanced ceramic compound combining gallium, arsenic, and oxygen in a crystalline structure, belonging to the family of compound oxide ceramics used in semiconductor and photonic applications. While primarily of research and specialized industrial interest rather than commodity use, this material is explored for its potential in optoelectronic devices, nonlinear optical components, and radiation-resistant applications where gallium compounds offer advantages over traditional alternatives. Its appeal lies in the unique combination of electrical and optical properties that gallium-based ceramics provide, making it relevant for engineers designing high-performance photonic systems or radiation-hardened electronics.

optoelectronic devicesnonlinear optical componentsradiation-resistant electronicssemiconductor substratesphotonic integrated circuitsresearch and development applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	5,662.3	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2700	-	DFT · OptB88vdW
Shear Modulus(G)	3,145.9	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1504	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.198	eV	DFT · OptB88vdW
↳	5.198	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	6.759	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	3.419	-	DFT · OptB88vdW
↳	3.935	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.2506	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000599	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000234	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-93.70	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	484.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.527	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsO4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental