GaAsO2S

ceramic

· GaAsO2S

GaAsO₂S is an oxysulfide ceramic compound combining gallium arsenide with oxygen and sulfur elements, representing a mixed-anion semiconductor ceramic in the III-V compound family. This material is primarily investigated in research contexts for optoelectronic and photonic applications, particularly where the combination of arsenic and sulfur anions offers potential advantages in bandgap engineering or optical transparency windows compared to binary GaAs or conventional II-VI semiconductors. Its mixed-anion structure makes it notable for potential use in advanced photonic devices, but it remains largely experimental with limited commercial deployment compared to mature GaAs or GaP alternatives.

optoelectronic researchphotonic integrated circuitsbandgap engineeringsemiconductor researchwide-spectrum optical applicationscompound semiconductor development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.0000276	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental