GaAsO2N

ceramic

· GaAsO2N

GaAsO₂N is an experimental III-V oxynitride ceramic compound combining gallium, arsenic, oxygen, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and ceramic nitrides, developed primarily in research settings to explore novel electronic and photonic properties that may bridge the performance gap between traditional GaAs semiconductors and nitride-based materials. The oxynitride composition is of interest for potential applications in high-temperature electronics, photocatalysis, and next-generation optoelectronic devices where conventional arsenide or nitride materials alone have limitations.

experimental semiconductorshigh-temperature electronicsphotocatalytic applicationsoptoelectronic researchwide-bandgap device developmentmaterials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00118	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental