GaAsO2F — Properties & Data | MatWorld

GaAsO2F

ceramic

· GaAsO2F

GaAsO₂F is an experimental mixed-anion ceramic compound combining gallium arsenide with oxide and fluoride constituents, representing a rare composition that blends semiconducting and ionic ceramic phases. This material remains primarily a research compound in the solid-state chemistry and materials science literature, with potential applications in optoelectronic devices, photocatalysis, or ion-conducting systems where the combination of As-O-F bonding networks offers unusual electronic or transport properties not achievable in conventional binaries.

research ceramicsoptoelectronic substratesphotocatalytic materialssolid-state ion conductorswide-bandgap semiconductorsexperimental compound development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-8.903e-15	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAsO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental