GaAsAu is a compound material system combining gallium arsenide (GaAs) semiconductor with gold, typically employed in thin-film or contact applications rather than as a bulk alloy. This material class appears in research and specialized industrial contexts where the electronic properties of GaAs must interface with the conductivity and stability of gold, making it relevant for hybrid semiconductor device fabrication and metallization schemes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 178.4 | ksi | — | ||
Shear Modulus(G) | 290.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3263 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2433 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.02022 | eV/atom | — |