GaAs

semiconductor

· GaAs

Gallium Arsenide (GaAs) is a III-V direct bandgap semiconductor compound formed from gallium and arsenic, widely recognized as a foundational material in optoelectronics and high-frequency electronics. It is the primary material choice for photovoltaic cells in space applications, laser diodes, and integrated circuits operating at microwave and millimeter-wave frequencies where its superior electron mobility and direct bandgap outperform silicon. Engineers select GaAs over conventional semiconductors when high radiation tolerance, efficient light emission/detection, or extreme frequency performance is required—making it indispensable in satellite power systems, fiber-optic communications, and defense/aerospace RF applications, though its higher cost and brittleness limit use to applications where these advantages justify the trade-off.

satellite solar cellslaser diodes and optoelectronicsmicrowave and RF integrated circuitshigh-electron-mobility transistors (HEMTs)space radiation-hardened electronicsfiber-optic communication components

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	8,809.2	ksi	DFT
↳	8,982.2	ksi	DFT · OptB88vdW
↳	8,809.2	ksi	DFT · PBE
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	DFT · PBE
Elastic Anisotropy(AU)	0.4078	-	DFT · PBE
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	ksi	DFT · PBE
Poisson's Ratio(ν)2 entries	0.2300	-	DFT · OptB88vdW
↳	0.2253	-	DFT · PBE
Shear Modulus(G)3 entries	5,924.6	ksi	DFT
↳	6,138	ksi	DFT · OptB88vdW
↳	5,924.6	ksi	DFT · PBE

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	18.55	BTU/(hr·ft·°F)	Measured

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1843	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	1.460	eV	Measured
↳	0.08500	eV	DFT · OptB88vdW
↳	1.321	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	252.1	-	DFT · OptB88vdW
↳	36.22 range 35.12–37.31median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	34.39	-	DFT · OptB88vdW
↳	10.21	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	6.009	C/m²	DFT · OptB88vdW
↳	0.1716	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00147	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00357	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-82.77	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	238.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.73	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.3346	eV/atom	DFT · OptB88vdW
↳	-0.3840	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs — Properties & Data | MatWorld