GaAs2W is a gallium arsenide tungsten compound that falls within the metal or intermetallic family, combining a III-V semiconductor element (gallium arsenide) with tungsten. This material represents an experimental or specialized composition rather than a widely commercialized alloy, and is primarily of interest in research contexts exploring novel metallurgical or optoelectronic hybrid systems where tungsten's high-temperature stability and density are combined with GaAs properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3511 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 0.04000 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.9099 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.6034 | eV/atom | — |