GaAs₂ is a compound semiconductor ceramic composed of gallium and arsenic in a 1:2 stoichiometric ratio. While not commonly encountered in standard industrial production, this material belongs to the III-V semiconductor family and represents a research-phase compound with potential relevance to optoelectronic and high-frequency device development. Engineers would consider this material primarily in specialized photonic and RF applications where the semiconductor properties of gallium arsenide systems are leveraged, though the specific GaAs₂ phase requires evaluation against more established GaAs or other III-V alternatives for thermal stability, lattice compatibility, and device yield.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 55.31 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 5.070 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.151 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4459 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2229 | eV/atom | — |