GaAs0.99Sb0.01

semiconductor

· GaAs0.99Sb0.01

GaAs₀.₉₉Sb₀.₀₁ is a gallium arsenide antimonide compound semiconductor—a narrow-bandgap III-V alloy created by substituting a small fraction of arsenic with antimony in the GaAs lattice. This slight compositional modification is used to fine-tune the electronic and optical properties of GaAs for infrared detection and emission applications, particularly in the 3–5 μm wavelength range where thermal imaging and thermal sensing occur. The antimony doping reduces the bandgap energy relative to pure GaAs, making it attractive for uncooled or lightly cooled infrared photodetectors and quantum-well structures in optoelectronic devices where spectral response tuning is critical.

infrared photodetectorsthermal imaging sensorsquantum-well heterostructuresoptoelectronic research devicesmid-infrared applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.99Sb0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control