GaAs0.99P0.01

semiconductor
· GaAs0.99P0.01

GaAs₀.₉₉P₀.₀₁ is a III-V compound semiconductor alloy formed by introducing a small amount of phosphorus into gallium arsenide, creating a direct-bandgap material with a bandgap energy slightly larger than pure GaAs. This alloy is primarily used in optoelectronic devices, particularly light-emitting diodes (LEDs) and laser diodes operating in the near-infrared region, where the minor phosphorus incorporation allows fine-tuning of the emission wavelength compared to pure GaAs while maintaining high quantum efficiency and fast carrier dynamics. Engineers select this composition when a specific wavelength between pure GaAs and higher phosphorus-content GaAsP alloys is required, or when performance characteristics of pure GaAs are nearly optimal but minor bandgap adjustment is needed for particular detector or emitter applications.

infrared LEDslaser diodesoptical communicationsphotodetectorsoptoelectronic integrated circuitswavelength-tuned emitters

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
GaAs0.99P0.01 — Properties & Data | MatWorld