GaAs0.8P0.2

semiconductor

· GaAs0.8P0.2

GaAs₀.₈P₀.₂ is a III-V direct-bandgap semiconductor alloy combining gallium arsenide and gallium phosphide in a fixed 80:20 ratio. This material is primarily used in optoelectronic and photonic devices where its bandgap energy—intermediate between pure GaAs and GaP—enables emission and detection in the red to near-infrared spectrum. Its direct-bandgap nature and lattice-matched growth characteristics make it valuable for LED applications and integrated photonic circuits where wavelength selectivity and quantum efficiency are critical.

red and infrared LEDsoptoelectronic integrated circuitsphotonic waveguidesheterojunction solar cellsoptical communicationslight-emitting diodes

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.620	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.8P0.2

Electrical Properties

Regulatory Screening

Environmental

Export Control