GaAs0.86Sb0.14

semiconductor

· GaAs0.86Sb0.14

GaAs₀.₈₆Sb₀.₁₄ is a III-V semiconductor alloy combining gallium arsenide and gallium antimonide, engineered to achieve a specific bandgap intermediate between pure GaAs and GaSb. This quaternary-equivalent composition is primarily used in infrared optoelectronics and high-speed electronic devices, where its bandgap energy makes it suitable for detecting and emitting light in the mid-infrared spectrum (2–3 μm range). Compared to pure GaAs, this alloy offers extended wavelength response critical for thermal imaging, spectroscopy, and missile warning systems, while maintaining compatibility with established III-V device fabrication processes.

infrared photodetectorsthermal imaging sensorsmid-IR optoelectronicshigh-speed heterojunction devicesmissile warning systemsspectroscopic instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6600	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.86Sb0.14

Electrical Properties

Regulatory Screening

Environmental

Export Control