GaAs0.7Sb0.3

semiconductor

· GaAs0.7Sb0.3

GaAs₀.₇Sb₀.₃ is a III-V semiconductor alloy combining gallium arsenide and gallium antimonide in a 70:30 ratio, engineered to tune the bandgap and lattice constant for specific optoelectronic applications. This material is primarily used in infrared light-emitting devices, photodetectors, and laser diodes operating in the 1.5–2.5 μm wavelength range, where it offers better lattice matching and thermal performance than pure GaAs for longer-wavelength emission. Engineers select this alloy composition when near-infrared or mid-infrared response is needed while maintaining good radiative efficiency and substrate compatibility.

infrared LEDsnear-IR photodetectorsfiber-optic communicationsthermal imaging sensorslaser diodes (1.5–2.5 μm)space and defense optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6700	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.7Sb0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control