GaAs0.7P0.3

semiconductor

· GaAs0.7P0.3

GaAs0.7P0.3 is a III–V semiconductor alloy composed of gallium arsenide and gallium phosphide in a 70:30 ratio, engineered to achieve intermediate bandgap and lattice parameters between its binary endpoints. This direct-bandgap material is widely used in optoelectronic devices—particularly red and orange light-emitting diodes (LEDs), laser diodes, and photodetectors—where its tunable bandgap allows emission or detection in the visible and near-infrared spectrum. The alloy is valued for high quantum efficiency, good thermal stability, and compatibility with existing GaAs/GaP processing, making it a practical choice where specific wavelength targeting or lattice matching to substrates is required.

visible-spectrum LEDs (red/orange)laser diodes and coherent light sourcesphotodetectors and solar cellshigh-speed optoelectronic integrated circuitsdisplay and signaling applicationsresearch in bandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.7P0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control