GaAs0.6P0.4

semiconductor

· GaAs0.6P0.4

GaAs₀.₆P₀.₄ is a III–V compound semiconductor alloy combining gallium arsenide and gallium phosphide in a 60:40 ratio, engineered to tune the bandgap between that of pure GaAs and GaP. This material is used primarily in optoelectronic devices where the intermediate bandgap enables emission and detection in the visible-to-near-infrared spectrum, offering a balance between the infrared performance of GaAs and the higher-bandgap characteristics of GaP. The alloy has seen application in light-emitting diodes (LEDs) and laser diodes where wavelength engineering is critical, and remains relevant in research contexts for high-efficiency photonic devices and integrated optoelectronic circuits.

visible-spectrum LEDslaser diodesoptoelectronic integrated circuitsphotodetectorswavelength-engineered photonicsresearch semiconductor alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.910	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.6P0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control