GaAs0.65Sb0.35

semiconductor

· GaAs0.65Sb0.35

GaAs₀.₆₅Sb₀.₃₅ is a III-V compound semiconductor alloy combining gallium arsenide and gallium antimonide in a 65:35 ratio, engineered to achieve a narrow bandgap suitable for infrared applications. This material is primarily used in infrared photodetectors, thermal imaging sensors, and long-wavelength optoelectronic devices operating in the 3–5 μm atmospheric transmission window. The specific composition balances lattice matching requirements with bandgap tuning, making it a preferred choice over binary GaAs or GaSb alone for mid-infrared detection where sensitivity, spectral response, and thermal stability are critical.

infrared photodetectorsthermal imaging sensorslong-wavelength optoelectronicsmilitary surveillance systemsenvironmental monitoringspace-borne sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.65Sb0.35

Electrical Properties

Regulatory Screening

Environmental

Export Control