GaAs0.5P0.5

semiconductor

· GaAs0.5P0.5

GaAs₀.₅P₀.₅ is a III-V direct-bandgap semiconductor alloy combining gallium arsenide and gallium phosphide in equal proportions, forming a ternary compound with intermediate bandgap energy between its parent materials. This material is used primarily in optoelectronic devices such as LEDs and laser diodes, particularly in the red to near-infrared spectral range, where it offers a tunable bandgap that allows engineers to optimize wavelength output for specific applications. Compared to pure GaAs or GaP, the 50/50 composition provides a balance between emission efficiency and wavelength positioning, making it valuable for applications requiring precise control over light output characteristics.

red LEDs and light-emitting diodessemiconductor lasers and laser diodesoptoelectronic integrated circuitsvisible light emittersphotonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.5P0.5

Electrical Properties

Regulatory Screening

Environmental

Export Control