GaAs0.4P0.6

semiconductor

· GaAs0.4P0.6

GaAs₀.₄P₀.₆ is a direct-bandgap III-V semiconductor alloy combining gallium arsenide and gallium phosphide in a 40:60 ratio, tuning the bandgap energy for specific optoelectronic wavelengths. This material is used in light-emitting devices (LEDs and laser diodes) operating in the red-to-infrared spectrum, and historically in solar cells for space applications where its radiation tolerance and efficiency make it valuable compared to silicon-based alternatives.

Red-spectrum LEDsInfrared emittersSpace solar cellsOptoelectronic integrated circuitsHigh-efficiency photovoltaicsRadiation-hardened devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.4P0.6

Electrical Properties

Regulatory Screening

Environmental

Export Control