GaAs0.15Sb0.85

semiconductor

· GaAs0.15Sb0.85

GaAs₀.₁₅Sb₀.₈₅ is a III-V semiconductor alloy composed of gallium arsenide and gallium antimonide, engineered to operate in the infrared spectral region. This material is primarily used in infrared optoelectronics and thermal imaging systems, where its narrow bandgap enables detection and emission at wavelengths longer than those accessible to pure GaAs, making it valuable for military, aerospace, and industrial thermal sensing applications.

infrared detectorsthermal imaging sensorslong-wavelength optoelectronicsaerospace applicationsmilitary surveillance systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.15Sb0.85

Electrical Properties

Regulatory Screening

Environmental

Export Control