GaAs0.05Sb0.95

semiconductor
· GaAs0.05Sb0.95

GaAs₀.₀₅Sb₀.₉₅ is a gallium arsenide–antimony compound semiconductor, a narrow-bandgap III-V alloy engineered for infrared wavelength sensitivity in the 3–5 μm atmospheric transmission window. This material is primarily used in thermal imaging, infrared detection, and night-vision systems where its bandgap energy makes it sensitive to mid-wave infrared radiation; it is favored over pure GaSb because the arsenic addition allows fine-tuning of spectral response and thermal characteristics. The antimony-rich composition represents a specialized research and production variant used in high-performance military, aerospace, and scientific instrumentation applications where sensitivity to specific infrared bands justifies the material's complexity and cost.

thermal imaging sensorsinfrared detectorsnight-vision systemsmilitary optical systemsaerospace surveillancescientific spectroscopy

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
GaAs0.05Sb0.95 — Properties & Data | MatWorld