GaAs₀.₀₅Sb₀.₉₅ is a gallium arsenide–antimony compound semiconductor, a narrow-bandgap III-V alloy engineered for infrared wavelength sensitivity in the 3–5 μm atmospheric transmission window. This material is primarily used in thermal imaging, infrared detection, and night-vision systems where its bandgap energy makes it sensitive to mid-wave infrared radiation; it is favored over pure GaSb because the arsenic addition allows fine-tuning of spectral response and thermal characteristics. The antimony-rich composition represents a specialized research and production variant used in high-performance military, aerospace, and scientific instrumentation applications where sensitivity to specific infrared bands justifies the material's complexity and cost.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.280 | eV | — |