GaAs0.01Sb0.99
semiconductor· GaAs0.01Sb0.99
GaAs₀.₀₁Sb₀.₉₉ is a III-V compound semiconductor alloy with antimony-rich composition, representing a heavily Sb-dominated gallium arsenide antimonide system. This material is primarily of research and development interest for infrared optoelectronic applications, where the small GaAs incorporation modifies the bandgap and lattice properties of the base GaSb host to enable tuned performance in long-wavelength infrared detection and emission. Compared to pure GaSb, this composition allows engineers to optimize wavelength sensitivity and thermal stability for applications demanding precise control in the 1–10 μm range, though it remains less mature than established binary III-V compounds in production environments.
infrared detectorsthermal imaging sensorslong-wavelength optoelectronicsresearch-phase materialsbandgap engineeringquantum well structures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.