GaAs₀.₀₁Sb₀.₉₉ is a III-V compound semiconductor alloy with antimony-rich composition, representing a heavily Sb-dominated gallium arsenide antimonide system. This material is primarily of research and development interest for infrared optoelectronic applications, where the small GaAs incorporation modifies the bandgap and lattice properties of the base GaSb host to enable tuned performance in long-wavelength infrared detection and emission. Compared to pure GaSb, this composition allows engineers to optimize wavelength sensitivity and thermal stability for applications demanding precise control in the 1–10 μm range, though it remains less mature than established binary III-V compounds in production environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.370 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data