GaAs0.01P0.99

semiconductor

· GaAs0.01P0.99

GaAs0.01P0.99 is a III-V semiconductor alloy composed of gallium arsenide phosphide, with arsenic at approximately 1% and phosphorus at 99%—essentially gallium phosphide (GaP) with a small arsenic dopant. This material is used in optoelectronic devices, particularly red and infrared light-emitting diodes (LEDs) and laser diodes, where the arsenic addition tunes the bandgap energy and emission wavelength relative to pure GaP. The arsenic-modified composition enables engineers to achieve specific wavelengths in the visible and near-infrared spectrum while maintaining the robustness and efficiency characteristics of the GaP platform, making it valuable in industrial lighting, automotive indicator lamps, and fiber-optic communication applications.

red/infrared LEDsoptical communicationautomotive indicator lightsphotodetectorsoptoelectronic integrated circuitsvisible light signaling

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.230	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAs0.01P0.99

Electrical Properties

Regulatory Screening

Environmental

Export Control