GaAlO₂S is a mixed-anion ceramic compound combining gallium, aluminum, oxygen, and sulfur, belonging to the family of oxysulfide ceramics. This material is primarily of research interest for optoelectronic and photonic applications, where the sulfur substitution into the oxide lattice modifies bandgap and refractive properties compared to conventional oxides like alumina or gallium oxide. Industrial adoption remains limited, but the oxysulfide ceramic family shows potential in wide-bandgap semiconductors, phosphor hosts, and optical coatings where tunable electronic and optical properties are desired.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000916 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.060 | eV/atom | — |