GaAlN3

metal

· GaAlN3

GaAlN3 is a gallium aluminum nitride compound, part of the III-nitride semiconductor family that forms the foundation for high-performance optoelectronic and power electronic devices. This material is primarily of research and development interest, with potential applications in wide-bandgap semiconductor technology where superior thermal stability, high electron mobility, and radiation hardness are critical advantages over traditional silicon-based alternatives.

wide-bandgap semiconductorshigh-temperature electronicsRF/microwave power devicesspace radiation-hardened circuitsoptoelectronic componentsadvanced research applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.030	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.780	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control