GaAgTeSe is a quaternary semiconducting compound composed of gallium, silver, tellurium, and selenium—a member of the chalcogenide semiconductor family. This material exists primarily in research and development contexts, where it is investigated for its potential optoelectronic and photovoltaic properties due to the tunable band gap and unique electronic structure offered by its multi-element composition. The combination of these elements makes it of interest for next-generation solar cells, infrared detectors, and photonic applications where conventional binary or ternary semiconductors face performance limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2031 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.1270 | eV | DFT · OptB88vdW | ||
| ↳ | 1.117 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.402 | - | DFT · OptB88vdW | ||
| ↳ | 7.985 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.71 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00330 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3325 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data