GaAgTe2 — Properties & Data | MatWorld

GaAgTe2

Name: GaAgTe2
Brand: MatWorld

semiconductor

· GaAgTe2

GaAgTe₂ is a ternary chalcogenide semiconductor compound combining gallium, silver, and tellurium elements. This material belongs to the family of I-III-VI semiconductors and is primarily of research interest rather than established commercial production, with potential applications in optoelectronic and thermoelectric device development. The silver-containing chalcogenide system offers tunable electronic properties for specialized semiconductor applications where alternative binary or simpler ternary systems may be inadequate.

Experimental semiconductorsOptoelectronic research devicesThermoelectric materials developmentInfrared detectorsSolar cell researchHigh-pressure semiconductor studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	6,277.2	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3500	-	DFT · OptB88vdW
Shear Modulus(G)	2,208.9	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2080	lb/in³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.100	eV	Measured
↳	0.1050	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	56.74	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	14.89	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.9505	C/m²	DFT · OptB88vdW
↳	0.02129	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000436	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00248	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-62.34	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	229.8	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000100	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2390	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaAgTe2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

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